dual igbt nx-series module 1000 amperes/1200 volts CM1000DXL-24S 1 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery free-wheel diode isolat ed baseplate for easy heat sinking applications: a c motor control motion/ser vo control phot ovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM1000DXL-24S is a 1200v (v ces ), 1000 ampere dual igbt power module. type current rating v ces amperes v olts (x 50) cm 1 000 24 outline drawing and circuit diagram di mensions inches millimeters a 5.98 152.0 b 5.39 137.0 c 4.79 121.7 d 4.61 117.2 e 4.330.02 110.00.5 f 3.72 94.5 g 0.6 1 5.14 h 0.26 6.5 j 0.53 13.5 k 0.14 3.6 l 0.3 7 .75 m 0.016 4.05 n 1.53 39.0 p 0.86 22.0 q 1.95 49.72 r 1.62 41 .22 s 0.83 21 .14 t 0.23 6.0 u 0.47 1 2.0 v 0.41 1 0.53 w m6 metric m6 x 0.22 dia. 5.5 dia. y 0.75 1 9.24 dimensions inches millimeters z 0.86 22.0 aa 1.08 27 .53 ab 0.14 3.5 ac 0.51 1 3.0 ad 0.19 3.0 ae 0.42 1 0.74 af 0.67+0.04/-0.02 17.0+1.0/-0.5 ag 0.81 20.5 ah 0.29 7 .4 aj 0.05 1 .2 ak 0.02 0.65 al 0.04 1 .15 am 0.15 3.81 an 0.5 1 2.5 ap 0.12 3.0 aq 0.088 dia. 2.25 dia. ar 0.102 dia. 2.6 dia. as 0.16 dia. 4.3 dia. at 0.67 1 6.9 au 0.6 1 5.24 av 0.75 1 9.05 aw 0.27 7 .0 di1d i2 tr 1t r2 es 1 (62) g1 (61) th2 (57) th1 (56) th cs1 (52) es 2 (47) g2 (46) cs2 (42) c1(1) c1(2) e2(3) e2(4) c2e1 (32) c2e1 (33) ntc detail "b" a b c d e f g j k l l k y aafed z z ac h ab ad aw ac af ag u t p qr nc s m ah aj an as ar aq ap am al ak detail "b" detail "a" w(6 places) x(4 places) detail "a" 1 2 3 4 5678 91 01 11 21 31 41 51 61 71 81 92 02 12 22 32 42 52 62 7 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 28 29 30 31 32 33 37 38 39 34 35 36 40 at ae v au au av au am am am h the to lerance of si ze betw een te rm inals is assumed to 0.4 division of dimension to leranc e 0.5 to 3 0.2 ov er 3 to 6 0.3 ov er 6 to 30 0.5 ov er 30 to 1 20 0.8 ov er 120 to 400 1.2 to lerance otherwise specif ied (mm)
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 2 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (dc, t c = 124c) *2,*4 i c 900* amperes collector current (pulse) *3 i crm 2000 amper es total power dissipation (t c = 25c) *2,*4 p tot 7500 watts emitter current (t c = 25c) *2 i e *1 900* amperes emitter current (pulse) *3 i erm *1 2000 amper es *limited by power terminals. module characteristics symbol rating units isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 v olts maximum junction temperature, instantaneous event (overload) t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature, continuous operation (under switching) t j(op) -40 t o +150 c storage temperature t stg -40 t o +125 c *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *3 p ulse width and repetition rate should be such that device junction temperature (t j ) does not e xceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction t emperature (t j(max) ) rating. 0 20.9 32.6 46.0 72.6 73.6 86.0 87.0 0 26.4 40.0 72.2 73.2 86.8 85.8 0 27.2 57.6 42.2 81.8 83.8 98.6 94.0 53.2 38.0 79.2 23.0 0 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di2 tr 2 di1 tr 1 di1 tr 1 di2 tr 2 di2 tr 2
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 3 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 100ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 1000a, v ge = 15v, t j = 25c *5 1.85 2.30 volts (t erminal) i c = 1000a, v ge = 15v, t j = 125c *5 2.05 volts i c = 1000a, v ge = 15v, t j = 150c *5 2.1 0 volts collector-emitter saturation voltage v ce(sat) i c = 1000a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 1000a, v ge = 15v, t j = 125c *5 1.90 volts i c = 1000a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 100 nf output capacitance c oes v ce = 10v, v ge = 0v 20 nf reverse transfer capacitance c res 1.7 nf gate charge q g v cc = 600v, i c = 1000a, v ge = 15v 2300 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 1000a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 1000a, v ge = 0v, t j = 25c *5 1.85 2.30 volts (t erminal) i e = 1000a, v ge = 0v, t j = 125c *5 1.85 volts i e = 1000a, v ge = 0v, t j = 150c *5 1.85 volts emitter-collector voltage v ec *1 i e = 1000a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 1000a, v ge = 0v, t j = 125c *5 1.70 volts i e = 1000a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 1000v, i e = 600a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 53.3 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 1000a, v ge = 15v 45.6 mj turn-off switching energy per pulse e off r g = 0?, t j = 150c 97.1 mj reverse recovery energy per pulse e rr *1 inductive load 96.7 mj internal lead resistance r cc' + ee' main terminals-chip, 0.5 m? p er switch,t c = 25c *2 internal gate resistance r g per switch 2.0 ? *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *5 p ulse width and repetition rate should be such as to cause negligible temperature rise. 0 20.9 32.6 46.0 72.6 73.6 86.0 87.0 0 26.4 40.0 72.2 73.2 86.8 85.8 0 27.2 57.6 42.2 81.8 83.8 98.6 94.0 53.2 38.0 79.2 23.0 0 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di2 tr 2 di1 tr 1 di1 tr 1 di2 tr 2 di2 tr 2
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 4 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *2 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c *2 , r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *2 10 mw thermal resistance characteristics thermal resistance, junction to case *2 r th(j-c) q per inverter igbt 20 k/kw thermal resistance, junction to case *2 r th(j-c) d per inverter fwdi 38 k/kw contact thermal resistance, r th(c-f) thermal grease applied, 7 k/kw case to heatsink *2 per 1 module *7 mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb mounting torque m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 13.2 mm terminal to baseplate 15.3 mm clearance d a terminal to terminal 13.2 mm terminal to baseplate 14.8 mm weight m 690 grams flatness of baseplate e c on centerline x, y *8 0 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across c1-e2 terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across 13.5 15.0 16.5 volts g1 -es1/g2-es2 terminals external gate resistance r g per switch 0 5.1 ? *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 t ypical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplat e (mounting side) flatness measurement points (x, y) are shown in the figure below. ? : concave + : convex ? : concave x y + : convex mounting side label side mounting side 0 20.9 32.6 46.0 72.6 73.6 86.0 87.0 0 26.4 40.0 72.2 73.2 86.8 85.8 0 27.2 57.6 42.2 81.8 83.8 98.6 94.0 53.2 38.0 79.2 23.0 0 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di2 tr 2 di1 tr 1 di1 tr 1 di2 tr 2 di2 tr 2
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 5 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 1412 16 18 20 8 6 4 2 0 t j = 25c i c = 2000a i c = 1000a i c = 400a collector-emitter voltage, v ce , (volts) output characteristics (typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 9 t j = 25 c 2000 400 800 1200 1600 collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 2000 1600 1200 800 400 15 v ge = 15v t j = 25c t j = 125c t j = 150c 0 0.5 1.0 1.5 2.0 2.5 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 10 3 v ge = 15v t j = 25c t j = 125c t j = 150c emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts )
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 6 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 1 10 2 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 external gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 10 2 switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 1000a t j = 125c inductive load t f 10 2 10 4 10 2 10 3 switching time, t d(on) , (ns) capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, t r , t f , t d(off) , (ns)
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 7 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com external gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 1000a t j = 150c inductive load t f 10 2 10 4 10 2 10 3 gate charge, q g , (nc) gate charge vs. v ge 20 0 16 12 8 4 0 500 1000 1500 2000 2500 35003000 i c = 1000a v cc = 600v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr switching time, t r , t f , t d(off) , (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns) switching time, t d(on) , (ns)
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 8 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , (?) 10 3 10 2 10 -1 10 0 10 1 10 1 10 0 10 4 10 3 10 2 10 1 10 3 10 2 10 1 10 0 10 4 10 3 10 2 10 1 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v r g = 0 t j = 150c v cc = 600v v ge = 15v i c /i e = 1000a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr e on e off e rr e on e off e rr gate resistance, r g , (?) 10 -1 10 0 10 1 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v i c /i e = 1000a t j = 150c e on e off e rr switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) reverse recovery energy, e rr , (mj)
CM1000DXL-24S dual igbt nx-series module 1000 amperes/1200 volts 9 05/13 rev. 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c) = 20k/kw (igbt) r th(j-c) = 38k/kw (fwdi) z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c')
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